The Impact of Substrate Doping Concentration on Electrical Characteristics of 45nm Nmos Device

Volume 8 Issue 2 December - February 2018

Research Paper

The Impact of Substrate Doping Concentration on Electrical Characteristics of 45nm Nmos Device

Nitin Sachdeva*, Dr.Munish Vashishath**, Dr.P.K.Bansal***

Assistant Professor, Department of Electronics Engineering, Young Men’s Christian Association University of Science and Technology, Faridabad, India.

Professor, Department of Electronics Engineering, Young Men’s Christian Association University of Science and Technology, Faridabad, India

Ex-Principal, Department of Electronics Engineering, MMIT, Malout, India.

Sachdeva. N., Munishvashishath and Bansal.P.K. (2018). The Impact of Substrate Doping Concentration on Electrical Characteristics of 45nm Nmos Device. i-manager's Journal on Electronics Engineering, 8(2), 20-26. https://doi.org/10.26634/jele.8.2.14136

Abstract

This paper explores the impact of lightly doped (LD) and heavily doped (HD) substrates on a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with 40 nm Gate length. The influence of varying the p-type substrate doping 15 18 -3 concentration (from 10 to 10 cm ) is investigated in terms of the drain current, substrate current, sub-threshold current, on-off current ratio, sub-threshold swing and threshold voltage. The simulation results show that the lightly doped substrate devices with high work-function (wf) gives improved off-state leakage current. It has also been observed that LD devices have high drain current even on low gate oxide thickness. All the simulation and design work have been done in SILVACO TCAD software.