Vol. 5 Issue 1
Year: 2014
Issue: Sep-Nov
Title: Review On SOI MOSFET For Low Power Digital Application
Author Name: Nitu Rao, Vimal Kumar Mishra and R.K. Chauhan
Synopsis:
Several Metal Oxide Semiconductor (MOS) structures are discussed in this paper namely Silicon on Insulator (SOI) MOSFET, Partially Depleted (PD) SOI MOSFET, Fully Depleted (FD) SOI MOSFET and tunnel diode body contact MOSFET. SOI MOSFET has certain advantages over conventional bulk MOSFET in terms of reduced short channel effect and drain induced barrier lowering. But SOI MOSFET has certain problems due to its buried oxide layer. So the comparative study of different SOI MOSFET over bulk MOSFET has been taken. To overcome the problem of Floating Body Effect and high series resistance different structures of FD SOI MOSFET are explained in brief. A Tunnel Diode Body Contact SOI MOSFET is also studied in this paper to overcome the problem of Floating Body Effect in PD SOI MOSFET.
Year: 2014
Issue: Sep-Nov
Title: Review On SOI MOSFET For Low Power Digital Application
Author Name: Nitu Rao, Vimal Kumar Mishra and R.K. Chauhan
Synopsis:
Several Metal Oxide Semiconductor (MOS) structures are discussed in this paper namely Silicon on Insulator (SOI) MOSFET, Partially Depleted (PD) SOI MOSFET, Fully Depleted (FD) SOI MOSFET and tunnel diode body contact MOSFET. SOI MOSFET has certain advantages over conventional bulk MOSFET in terms of reduced short channel effect and drain induced barrier lowering. But SOI MOSFET has certain problems due to its buried oxide layer. So the comparative study of different SOI MOSFET over bulk MOSFET has been taken. To overcome the problem of Floating Body Effect and high series resistance different structures of FD SOI MOSFET are explained in brief. A Tunnel Diode Body Contact SOI MOSFET is also studied in this paper to overcome the problem of Floating Body Effect in PD SOI MOSFET.
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