Semiconducting - Carbon Nanotube Field Effect Transistor Based Inverter

Vol.1 No. 1

Year: 2010

Issue: Sep-Nov

Title: Semiconducting - Carbon Nanotube Field Effect Transistor Based Inverter 

Author Name: V. Saravanan, V. Kannan 

Synopsis:

Many research groups attempt to extend Moore's law for digital circuits beyond the expected end of the CMOS scaling by proposing alternate devices. Designing MOSFETs with channel lengths much smaller than a micrometre is a challenge, and creates the problems in device fabrication, which limits advancing the integrated circuit. Small size of the MOSFET below a few tens of nanometres creates the low Trans-conductance, gate oxide leakage, low ON-current, Mobility degradation and increased delay. Problems observed in the MOSFET when size is reduced are avoided in CNTFET. Since in case of CNTFET carbon nanotube is used as channel and high-k material is used as gate dielectric and also our result shows that CNTFET exhibit the better performance than MOSFET in current conduction, In this paper, we present the spice model creation of MOSFET like CNTFET, current-voltage characteristics of an emerging nano device with classical behavior MOSFET like CNTFET. Specifically we have concentrated semi conducting carbon nanotube field effect transistor (SCNTFET), Device has been simulated using spice and also investigate the performance of digital inverter gates based on semi-conducting CNTFET.