Performance Comparison of Carbon Nanotube, Graphene Nano Ribon and Silicon Nanowire Transistors

Vol.4  No.1

Year: 2013

Issue: Sep-Nov

Title : Performance Comparison of Carbon Nanotube, Graphene Nano Ribon and Silicon Nanowire Transistors

Author Name : S. B. Siddique, T. M. Faruki , B.C. Sarkar , Md. Mahmudul Hasan

Synopsis :

Siddique et.alanalyzed the performance potential of ballistic CNT, Graphene and Silicon Nanowire(SiNW) field effect transistors for future high-performance applications. The simulation is carried out on single sub-band top of the barrier model and the common off-current value is set as 10nA.The result shows that the CNT transistor is a good amplifier and the transconductance is high compared to GNR and SiNW transistors by showing higher frequency performance and higher transconductance.

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