A Highly Durable Double Edge Triggered D-Flip Flop Based Shift Registers using 10nM CNTFET Technology

Vol.3 No.4

Year : 2013

Issue: Jun-Aug

Title : A Highly Durable Double Edge Triggered D-Flip Flop Based Shift Registers using 10nM CNTFET Technology

Author Name : RAVI.T, V. Kannan

Synopsis :

In this paper, a highly durable Double Edge Triggered D-Flip Flop based Serial in Serial Out (SISO), Serial in Parallel Out (SIPO), Parallel In Serial Out (PISO) and Parallel In Parallel Out (PIPO) shift registers are designed using 10nM Carbon Nano Tube Field Effect Transistor (CNTFET) technology. The CNTFET is a cutting edge device to overcome the current CMOS technology for its excellent electrical properties. To evaluate the durability, shift registers using CNTFET are analysed and the transient analysis are depicted. Power consumption, delay, PDP, rise time and fall time are evaluated using HSPICE with 1GHz operating frequency.